Please answer the following questions:
1, Explain the concept of channel formation when you raise the gate potential to Vt?
- Explain how the gate area experience the electric field due to gate voltage VG?
- When we apply a small voltage at the drain of N-MOSFET, current start to flow from drain to source. What happens when we increase VDS equal to VG?
- Explain why the current remain steady when the transistor is biased in saturation?
- Draw the structure of n-MOSFET cross section and explain the different regions of the transistor?
- Explain accumulation, depletion and inversion when we apply the gate potential from -1V …0V..1V using the cross section of the transistor from question 5.
- Draw the shape the inversion layer under the following conditions?
i. VDS << VG
ii. VDS = VG
iii. VDS > VG
iv. VDS >> VG.
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